Defects in Ge Doped SiC Crystals
نویسندگان
چکیده
منابع مشابه
Characteristics of the intrinsic defects in unintentionally doped 4H-SiC after thermal annealing
Thermal annealing effects on the characteristics of intrinsic defects in unintentionally doped 4H–SiC were investigated. The 4H–SiC samples were prepared by Low-Pressure Chemical Vapor Deposition (LPCVD) technique. Results show that there is only one Electron Spin Resonance (ESR) peak and a broad, from green to yellow, photoluminescence (PL) band were detected. These results are attributed to t...
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ژورنال
عنوان ژورنال: Journal of Inorganic Materials
سال: 2016
ISSN: 1000-324X
DOI: 10.15541/jim20160129